Tvs Diode Array Spa Diodes Page 75 TVS Diode Array SPA Diodes Catalog

2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1005 Series Notes: 1. "1 " indicates SP1005-01WTG , while "2" indicates SP1005-01ETG 2. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units I PP Peak Current (t p =8/20 s) 10.0 1 A 8.0 2 T OP Operating Temperature -40 to 125C T STOR Storage Temperature -55 to 150C Electrical Characteristics (T OP =25 C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 6.0 V Breakdown Voltage V BR I R =1mA 8.5 9.5 V Leakage Current I LEAK V R =5V with 1 pin at GND 0.1 0.5 A Clamp Voltage 1 V C I PP =1A, t p =8/20s, Fwd 9.3 V I PP =2A, t p =8/20s, Fwd 10.0 V I PP =10A, t P =8/20 s, Fwd 15.6 V Dynamic Resistance 2 R DYN TLP, tp =100ns, I/O to GND 0.28 ESD Withstand Voltage 1 V ESD IEC61000-4-2 (Contact Discharge) 30 kV IEC61000-4-2 (Air Discharge) 30 kV Diode Capacitance 1 C D Reverse Bias=0V 30 pF Reverse Bias=2.5V 23 pF Notes: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200[s rise time. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150C Maximum Junction Temperature 150C Maximum Lead Temperature (Soldering 20-40s) 260C Pulse Waveform Capacitance vs. Reverse Bias 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Bias Voltage (V) Capacitance (pF) 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time ( s) Percent of I PP

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