Tvs Diode Array Spa Diodes Page 190 TVS Diode Array SPA Diodes Catalog

2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SP2502L Series SP4040 Absolute Maximum Ratings Parameter Rating Units Peak Pulse Current (8/20s) 75 A Peak Pulse Power (8/20s) 2100 W IEC 61000-4-2, Direct Discharge, (Level 4) 30 kV IEC 61000-4-2, Air Discharge, (Level 4) 30 kV Telcordia GR 1089 (Intra-Building) (2/10s) 100 A ITU K.20 (5/310s) 20 A Electrical Characteristics (T OP = 25C) Thermal Information Parameter Rating Units SOIC Package 170C/W Operating Temperature Range -40 to 125C Storage Temperature Range -55 to 150C Maximum Junction Temperature 150C Maximum Lead Temperature (Soldering 20-40s) (SOIC - Lead Tips Only) 260C Parameter Symbol Test Conditions Min Typ Max Units Reverse Stand-Off Voltage V RWM I T 1A - 3.3 V Reverse Breakdown Voltage V BR I T = 2A 3.3 - V Snap Back Voltage V SB I T = 50mA 3.3 - V Reverse Leakage Current I R V RWM = 3.3V - 1 A Clamping Voltage, Line-Ground 1 V C I PP = 40A, t p =8/20 s - 14 V Clamping Voltage, Line-Ground 1 V C I PP = 75A, t p =8/20 s - 20 V Clamping Voltage, Line-Ground 1 V C I PP = 100A, t p =2/10 s 20 V Dynamic Resistance, Line-Ground 1 R DYN ( V C2 -V C1 )/(I PP2 -I PP1 ) - 0.2 - W Clamping Voltage, Line-Line 1 V C I PP = 40A, t p =8/20 s - 20 V Clamping Voltage, Line-Line 1 V C I PP = 75A, t p =8/20 s - 30 V Clamping Voltage, Line-Line 1 V C I PP = 100A, t p =2/10 s 30 V Dynamic Resistance, Line-Line 1 R DYN ( V C2 -V C1 )/(I PP2 -I PP1 ) - 0.3 - W Junction Capacitance 1 C j Line to Ground V R =0V, f= 1MHz - 5 8 pF Line to Line, V R =0V, f= 1MHz - 2.5 5 pF CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1 Parameter is guaranteed by design and/or device characterization.

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