Tvs Diode Array Spa Diodes Page 179 TVS Diode Array SPA Diodes Catalog

2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SLVU2.8 Series Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Time Temperature T P T L T S(max) T S(min) 25 t P t L t S time to peak temperature Preheat Ramp-up Ramp-down Ramp-do Critical Zone TL to T P Critical Zone TL to T P Reflow Condition Pb - Free assembly Pre Heat - Temperature Min (T s(min) ) 150C - Temperature Max (T s(max) ) 200C - Time (min to max) (t s ) 60 - 180 secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3C/second max T S(max) to T L - Ramp-up Rate 3C/second max Reflow - Temperature (T L ) (Liquidus) 217C - Temperature (t L ) 60 - 150 seconds Peak Temperature (T P ) 260 +0/-5 C Time within 5C of actual peak Temperature (t p ) 20 - 40 seconds Ramp-down Rate 6C/second max Time 25C to peak Temperature (T P ) 8 minutes Max. Do not exceed 260C Soldering Parameters Data Line Protection of one unidirectional line Ethernet PHY J1 J8 RJ-45 Connector NC Protection of one unidirectional data line is realized by connecting pin 3 to the protected line, and pins 1 and 2 to GND. In this configuration, the device presents a maximum loading capacitance of tens of picofarads. During positive transients, the internal TVS diode will conduct and steer current from pin 3 to 1 (GND), clamping the data line at or below the specified voltages for the device (see Electrical Characteristics section). For negative transients, the internal compensating diode is forward biased, steering the current from pin 2 (GND) to 3. Application Example Detail Low capacitance protection of a high-speed data pair is realized by connecting two devices in antiparallel. As shown, pin 1 of the first device is connected to D1 and pin 2 is connected to D2. Additionally, pin 2 of the second device is connected to D1 and pin 1 is connected to D2. Pin 3 must be NC (or not connected) for both devices. When the potential on D1 exceeds the potential on D2 (by the rated standoff voltage), pin 2 on the second device will steer current into pin 1. The compensating diode will conduct in the forward direction steering current into the avalanching TVS diode which is operating in the reverse direction. For the opposite transient, the first device will behave in the same manner. In this two device arrangement, the total loading capacitance is two times the rated capacitance from pin 2 to pin 1 which will typically be much less than 10pF making it suitable for high- speed data pair such as 10/100/1000 Ethernet. NC Low capacitance protection of one high speed data pair D1 D2

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