Tvs Diode Array Spa Diodes Page 146 TVS Diode Array SPA Diodes Catalog

2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP0524P Series CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units I PP Peak Current (t p =8/20 s) 4.0 A T OP Operating Temperature -40 to 125C T STOR Storage Temperature -55 to 150C Electrical Characteristics (T OP =25 C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1A 5.0 V Reverse Breakdown Voltage V BR I R = 1mA 6 6.5 V Reverse Leakage Current I LEAK V R =5V, Any I/O to GND 1.5 A Clamp Voltage 1 V C I PP =1A, t p =8/20s, Fwd 6.6 V I PP =2A, t p =8/20s, Fwd 7.0 V Dynamic Resistance R DYN (V C2 - V C1 ) / (I PP2 - I PP1 ) 0.4 ESD Withstand Voltage 1 V ESD IEC 61000-4-2 (Contact) 12 kV IEC 61000-4-2 (Air) 25 kV Diode Capacitance 1 C I/O-GND Reverse Bias=0V, f=1 MHz 0.5 0.55 pF Diode Capacitance 1 C I/O-/O Reverse Bias=0V, f=1 MHz 0.3 pF Note: 1 Parameter is guaranteed by design and/or device characterization. Insertion Loss (S21) I/O to GND Capacitance vs. Bias Voltage Clamping Voltage vs. I PP Bias Voltage (V) Capacitance (pF) 0.0 0.2 0.4 2.0 3.0 4.0 5.0 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0 1 2 3 4 Clamp Voltage (V) Current (A) -30 -18 -15 -12 -9 -3 0 Attenuation (dB) -6 -21 -24 -27 100 1000 Frequency (MHz) Pulse Waveform 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time ( s) Percent of I PP

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