Thyristor Semiconductor Products Page 23 Thyristor

2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/14/14 Teccor brand Thyristors AN1001 Critical Rate-of-rise of Off-state Voltage or Static dv/ dt (dv/dt) - Minimum value of the rate-of-rise of principal voltage which will cause switching from the off state to the on state Critical Rate-of-rise of On-state Current (di/dt) - Maximum value of the rate-of-rise of on-state current that a Thyristor can withstand without harmful effect Gate-controlled Turn-on Time (t gt ) - Time interval between a specified point at the beginning of the gate pulse and the instant when the principal voltage (current) has dropped to a specified low value (or risen to a specified high value) during switching of a Thyristor from off state to the on state by a gate pulse. Gate Trigger Current (I GT ) - Minimum gate current required to maintain the Thyristor in the on state Holding Current (I H ) - Minimum principal current required to maintain the Thyristor in the on state Latching Current (I L ) - Minimum principal current required to maintain the Thyristor in the on state immediately after the switching from off state to on state has occurred and the triggering signal has been removed On-state Voltage (V T ) - Principal voltage when the Thyristor is in the on state Repetitive Peak Off-state Current (I DRM ) - Maximum instantaneous value of the off-state current that results from the application of repetitive peak off-state voltage Gate Trigger Voltage (V GT ) - Gate voltage required to produce the gate trigger current On-state Current (I T ) - Principal current when the Thyristor is in the on state Peak Gate Power Dissipation (P GM ) - Maximum power which may be dissipated between the gate and main terminal 1 (or cathode) for a specified time duration Repetitive Peak Off-state Voltage (V DRM ) - Maximum instantaneous value of the off-state voltage which occurs across a Thyristor, including all repetitive transient voltages and excluding all non-repetitive transient voltages Repetitive Peak Reverse Current of an SCR (I RRM ) - Maximum instantaneous value of the reverse current resulting from the application of repetitive peak reverse voltage Repetitive Peak Reverse Voltage of an SCR (V RRM )- Maximum instantaneous value of the reverse voltage which occurs across the Thyristor, including all repetitive transient voltages and excluding all non-repetitive transient voltages Surge (Non-repetitive) On-state Current (I TSM ) - On-state current of short-time duration and specified waveshape Thermal Resistance, Junction to Ambient (R JA )- Temperature difference between the Thyristor junction and ambient divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium Note: Ambient is the point at which temperature does not change as the result of dissipation. Thermal Resistance, Junction to Case (R JC ) - Temperature difference between the Thyristor junction and the Thyristor case divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium Breakover Voltage (V BO ) - Principal voltage at the breakover point Specific Terminology Average Gate Power Dissipation [P G(AV) ] - Value of gate power which may be dissipated between the gate and main terminal 1 (or cathode) averaged over a full cycle Critical Rate-of-rise of Commutation Voltage of a Triac (Commutating dv/dt) - Minimum value of the rate-of-rise of principal voltage which will cause switching from the off state to the on state immediately following on-state current conduction in the opposite quadrant Breakover Current (I BO ) - Principal current at the breakover point Circuit-commutated Turn-off Time (t q ) - Time interval between the instant when the principal current has decreased to zero after external switching of the principal voltage circuit and the instant when the Thyristor is capable of supporting a specified principal voltage without turning on Fundamental Characteristics of Thyristors (continued)

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