Thyristor Semiconductor Products Page 190 Thyristor

2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/14/14 Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs Static Characteristics Symbol Test Conditions Value Unit V TM 15A Device I T = 21.2A t p = 380 s MAX 1.60 V 16A Device I T = 22.6A t p = 380 s I DRM I RRM V D = V DRM / V RRM T J = 25C 400-1000V MAX 5 A T J = 125C 400-800V 2 mA T J = 100C 1000V 3 Thermal Resistances Symbol Parameter Value Unit R (J-C) Junction to case (AC) Qxx15Ry Qxx15Ny Qxx16RHy Qxx16NHy 1.7 C/W Qxx15Ly Qxx16LHy 2.1 R (J-A) Junction to ambient Qxx15Ry Qxx16RHy 45 C/W Qxx15Ly Qxx16LHy 50 Note: xx = voltage; y = sensitivity Figure 2: Normalized DC Gate Trigger Current for All Quadrants vs. Junction Temperature +125 0.0 1.0 2.0 3.0 4.0 -65 -40 Junction Temperature (T J ) - C Ratio of I GT / I GT (T J = 25C) -15 10 35 60 85 100 Figure 1: Definition of Quadrants Note: Alternistors will not operate in QIV MT2 POSITIVE (Positive Half Cycle) MT2 NEGATIVE (Negative Half Cycle) MT1 MT2 + I GT REF QII MT1 I GT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) I GT GATE (+) I GT - I GT GATE (-) I GT GATE (+) + - Electrical Characteristics (T J = 25C, unless otherwise specified) - Alternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Qxx16xH2 Qxx16xH3 Qxx16xH4 Qxx16xH6 Unit I GT V D = 12V R L = 60 I - II - III MAX. 10 20 35 80 mA V GT I - II - III MAX. 1.3 V GD V D = V DRM R L = 3.3 k T J = 125C I - II - III MIN. 0.2 V I H I T = 100mA MAX. 15 35 50 70 mA dv/dt V D = V DRM J = 125C 400V MIN. 200 350 475 925 V/ s 600V 150 250 400 850 800V 100 200 350 475 V D = V DRM J = 100C 1000V 100 200 300 350 (dv/dt)c (di/dt)c = 8.6 A/ms T J = 125C MIN. 2 20 25 30 V/ s t gt I G = 2 x I GT PW = 15 s I T = 22.6 A(pk) TYP. 3 5 s

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