Thyristor Semiconductor Products Page 175 Thyristor

2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/14/14 Teccor brand Thyristors 12 Amp Alternistor (High Communitation) Triacs Electrical Characteristics (T J = 25C, unless otherwise specified) - Alternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Qxx12xH2 Qxx12xH5 Unit I GT V D = 12V R L = 60 I - II - III MAX. 10 50 mA V GT I - II - III MAX. 1.3 V GD V D = V DRM R L = 3.3 k T J = 125C I - II - III MIN. 0.2 V I H I T = 100mA MAX. 15 50 mA dv/dt V D = V DRM J = 125C 400V MIN. 300 750 V/ s 600V 200 650 800V 150 500 V D = V DRM J = 100C 1000V 150 300 (dv/dt)c (di/dt)c = 6.5 A/ms T J = 125C MIN. 2 30 V/ s t gt I G = 2 x I GT PW = 15 s I T = 17.0 A(pk) TYP. 4 s Absolute Maximum Ratings - Alternistor (3 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx12LHy T C 12 A Qxx12RHy Qxx12NHy T C = 105C I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25C) f = 50 Hz t = 20 ms 110 A f = 60 Hz t = 16.7 ms 120 I 2 t I 2 t Value for fusing t p = 8.3 ms 60 A 2 s di/dt Critical rate of rise of on-state current f = 120 Hz T J = 125C 70 A/ s I GTM Peak gate trigger current t p d 10 s; I GT d I GTM T J = 125C 2.0 A P G(AV) Average gate power dissipation T J = 125C 0.5 W T stg Storage temperature range -40 to 150C T J Operating junction temperature range -40 to 125C Note: xx = voltage, y = sensitivity Static Characteristics Symbol Test Conditions Value Unit V TM I TM = 17.0A t p = 380 s MAX. 1.60 V I DRM I RRM V D = V DRM / V RRM T J = 25C 400-1000V MAX. 10 A T J = 125C 400-800V 2 mA T J = 100C 1000V 3 Thermal Resistances Symbol Parameter Value Unit R (J-C) Junction to case (AC) Qxx12RHy Qxx12NHy 1.2 C/W Qxx12LHy 2.3 R (J-A) Junction to ambient (AC) Qxx12RHy 45 C/W Qxx12LHy 90 ote: xx = voltage, y = sensitivity

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