Thyristor Semiconductor Products Page 147 Thyristor

2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/14/14 Teccor brand Thyristors 8 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs Absolute Maximum Ratings - Alternistor (3 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx08LHy T C 8 A Qxx08RHy / Qxx08NHy Qxx08VHy / Qxx08DHy T C I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25C) f = 50 Hz t = 20 ms Qxx08VHy / Qxx08DHy 80 A Qxx08LHy / Qxx08RHy / Qxx08NHy 83 f = 60 Hz t = 16.7 ms Qxx08VHy / Qxx08DHy 85 Qxx08LHy / Qxx08RHy / Qxx08NHy 100 I 2 t I 2 t Value for fusing t p = 8.3 ms Qxx08VHy / Qxx08DHy 30 A 2 s Qxx08LHy / Qxx08RHy / Qxx08NHy 41 di/dt Critical rate of rise of on-state current f = 120 Hz T J = 125C 70 A/ s I GTM Peak gate trigger current t P d 10 s; I GT d I GTM T J = 125C Qxx08VHy / Qxx08DHy 1.6 A Qxx08LHy / Qxx08RHy / Qxx08NHy 2.0 P G(AV) Average gate power dissipation T J = 125C I GT = 10mA Qxx08VHy / Qxx08DHy 0.4 W I GT = 35mA Qxx08LHy / Qxx08RHy / Qxx08NHy 0.5 T stg Storage temperature range -40 to 150C T J Operating junction temperature range -40 to 125C Electrical Characteristics (T J = 25C, unless otherwise specified) - Sensitive Triac (4 Quadrants) Symbol Test Conditions Quadrant Lxx08x6 Lxx08x8 Unit I GT V D = 12V R L = 60 I - II - III IV MAX. 5 10 20 mA V GT ALL MAX. 1.3 V GD V D = V DRM R L = 3.3 k T J = 110C ALL MIN. 0.2 V I H I T = 100mA MAX. 10 20 mA dv/dt V D = V DRM J = 100C 400V TYP. 30 40 V/ s 600V 20 30 (dv/dt)c (di/dt)c = 4.3 A/ms T J = 110C TYP. 2 V/ s t gt I G = 100mA PW = 15s I T = 11.3 A(pk) TYP. 3.0 3.2 s Note: xx = voltage, x = package, y = sensitivity Note: xx = voltage, y = sensitivity

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