Sidactor Protection Thyristor Products Page 77 SIDACtor Protection Thyristor Products

SIDACtor Protection Thyristors 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 Broadband Optimized TM Protection Series I PP I TSM 2x10s 1.2x50s/8x20s 10x700/5x310s 10x1000s 50 / 60 Hz A min F 100 80 37.5 30 15 Surge Ratings Package Symbol Parameter Value Unit 3x3 QFN T J Junction Temperature -40 to +150C T STG Storage Temperature Range -65 to +150C R 0JA Thermal Resistance: Junction to Ambient 100C/W Thermal Considerations I H I T I S I DRM V DRM V T +V -V +I -I V S 0 5 10 15 20 25 30 0 1 1 . 0 Bias Voltage (V) Capacitance (pF) V-I Characteristics Capacitance and Bias Voltage -8 -40 -20 0 20 40 60 80 100 120 140 160 -6 -4 0 2 4 6 8 10 12 14 Junction Temperature (T J ) - C Percent of V S Change - % 25 C 25C Case Temperature (T C ) - C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 Ratio of I H I H (T C = 25C) Normalized V S Change vs. Junction Temperature Normalized DC Holding Current vs. Case Temperature Notes: - Peak pulse current rating (I PP ) is repetitive and guaranteed for the life of the product. - I PP ratings applicable over temperature range of -40C to +85C - The device must initially be in thermal equilibrium with -40C < T J < +150C

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