Sidactor Protection Thyristor Products Page 108 SIDACtor Protection Thyristor Products

SIDACtor Protection Thyristors 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 Broadband Optimized TM Protection I H I T I S I DRM V DRM V T +V -V +I -I V S 50 100 0 t r t d 0 Peak Value Half Value t - Time (s) I PP - Peak Pulse Current - %I PP t r = rise time to peak value t d = decay time to half value Waveform = t r x t d V-I Characteristics t r x t d Pulse Waveform -8 -40 -20 0 20 40 60 80 100 120 140 160 -6 -4 0 2 4 6 8 10 12 14 Junction Temperature (T J ) - C Percent of V S Change - % 25 C 25C Case Temperature (T C ) - C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 Ratio of I H I H (T C = 25C) Normalized V S Change vs. Junction Temperature Normalized DC Holding Current vs. Case Temperature Soldering Parameters Reflow Condition Pb-Free assembly (see Fig. 1) Pre Heat - Temperature Min (T s(min) ) +150C - Temperature Max (T s(max) ) +200C - Time (Min to Max) (t s ) 60-180 secs. Average ramp up rate (Liquidus Temp (T L ) to peak) 3C/sec. Max. T S(max) to T L - Ramp-up Rate 3C/sec. Max. Reflow - Temperature (T L ) (Liquidus) +217C - Temperature (t L ) 60-150 secs. Peak Temp (T P ) +260(+0/-5)C Time within 5C of actual Peak Temp (t p ) 30 secs. Max. Ramp-down Rate 6C/sec. Max. Time 25C to Peak Temp (T P ) 8 min. Max. Do not exceed +260C Time Temperature T P T L T S(max) T S(min) 25 t P t L t S time to peak temperature (t 25C to peak) Ramp-down Ramp-up Preheat Critical Zone T L to T P Figure 1

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